| PART |
Description |
Maker |
| DF900R12IP4DV |
Bare Die IGBT
|
Infineon Technologies AG
|
| TLE6250GV3 TLE6250C TLE6250CV33 TLE6250G TLE6250GV |
Stand alone - High Speed CAN Transceiver for 3.3V micro Controller (Bare Die)
Stand alone - High Speed CAN Transceiver (Bare Die)
CAN-Transceiver
|
INFINEON[Infineon Technologies AG]
|
| S2308 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2305 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2301 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6301 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| M69KB096AB |
64 Mbit (4Mb x 16)/ 104MHz Clock Rate 1.8V Supply - Bare Die Burst PSRAM
|
STMicroelectronics
|
| S4003 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4108 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6201 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| 5SMX12H1251 |
IGBT-Die
|
ABB
|
| 5SMX12M6500 |
IGBT-Die
|
The ABB Group
|
